GaNFET Transistors

GaNFET Transistors
Defense
Space
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Technical specifications:

  • High conversion efficiency
  • High-frequency switching
  • Ultra-low gate charge
  • Zero reverse recovery charge (QRR = 0)
  • High power density
  • Immunity to TID, HDR and LDR radiation
  • Compact hermetic package
  • High reliability for space missions
  • Ideal for avionics systems and Space Grade DC/DC converters
  • Suitable for LEO, GEO and New Space applications
  • Designed for mission-critical space environments

GaNFET Transistors

Rad-Hard GaNFET Semiconductor

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